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inchange semiconductor product specification silicon pnp power transistors 2SA1878 description with ito-220 package switching power transistor low collector saturation voltage pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (ito-220) and symbol absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current -5 a i cm collector current-peak -10 a i b b base current -1.5 a i bm base current-peak -2.0 a p t total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
inchange semiconductor product specification silicon pnp power transistors 2SA1878 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-50ma ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-2.5a; i b =-0.25a -0.3 v v besat base-emitter saturation voltage i c =-2.5a; i b =-0.25a -1.2 v i cbo collector cut-off current at rated volatge -0.1 ma i ceo collector cut-off current at rated volatge -0.1 ma i ebo emitter cut-off current at rated volatge -0.1 ma h fe dc current gain i c =-2.5a ; v ce =-2v 70 f t transition frequency i c =-0.5a ; v ce =-10v 50 mhz switching times t on turn-on time 0.3 s t s storage time 1.5 s t f fall time i c =-2.5a;i b1 =-0.25a i b2 =0.25a ,r l =12 v bb2 =4v 0.2 s 2 inchange semiconductor product specification silicon pnp power transistors 2SA1878 package outline 3 fig.2 outline dimensions (unindicated tolerance: 0.20 mm) |
Price & Availability of 2SA1878 |
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